Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Lingyan Xu; Wanqi Jie; Xu Fu; A. E. Bolotnikov; R. B. James; Tao Feng; Gangqiang Zha; Tao Wang; Yadong Xu; Yasir Zaman

doi:10.1016/j.jcrysgro.2014.09.039

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Lingyan Xu, Wanqi Jie, Xu Fu, A. E. Bolotnikov, R. B. James, Tao Feng, Gangqiang Zha, Tao Wang, Yadong Xu, Yasir Zaman

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

Original language	English
Pages (from-to)	71-74
Number of pages	4
Journal	Journal of Crystal Growth
Volume	409
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.09.039
State	Published - 1 Jan 2015

Keywords

A1. Characterization
A1. Defects
A2. Bridgman technique
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2014.09.039

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title = "Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties",

abstract = "We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.",

keywords = "A1. Characterization, A1. Defects, A2. Bridgman technique, B2. Semiconducting II-VI materials",

author = "Lingyan Xu and Wanqi Jie and Xu Fu and Bolotnikov, {A. E.} and James, {R. B.} and Tao Feng and Gangqiang Zha and Tao Wang and Yadong Xu and Yasir Zaman",

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year = "2015",

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doi = "10.1016/j.jcrysgro.2014.09.039",

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TY - JOUR

T1 - Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

AU - Xu, Lingyan

AU - Jie, Wanqi

AU - Fu, Xu

AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Feng, Tao

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Xu, Yadong

AU - Zaman, Yasir

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

AB - We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between InCd+ defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.

KW - A1. Characterization

KW - A1. Defects

KW - A2. Bridgman technique

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=84908401095&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.09.039

DO - 10.1016/j.jcrysgro.2014.09.039

M3 - 文章

AN - SCOPUS:84908401095

SN - 0022-0248

VL - 409

SP - 71

EP - 74

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material's electrical properties

Abstract

Keywords

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