Auger-type process in ultrathin ReS2

Lei Wang, Saifeng Zhang, Jiawei Huang, Yu Mao, Ningning Dong, Xiaoyan Zhang, Ivan M. Kislyakov, Hongqiang Wang, Zixin Wang, Chenduan Chen, Long Zhang, Jun Wang

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The dramatic enhancement of charge carrier interaction makes many-body effects of great prominence in two-dimensional materials. Here we report the defect-assisted Auger scattering combined with band-to-band Auger recombination as playing the dominant recovery mechanism in the charge carriers of atomically thin-layered ReS2. Time resolved transient absorption spectra investigation reveals two different decay processes over the visible and nearinfrared range, which is attributed to the shallow and deep defects introduced by the existence of sulfur (S) vacancy. A rate equation system is invoked to rationalize our peculiar pump and temperature dependence of carrier dynamics quantitatively. These findings provide theoretical insights into the significant role played by nonradiative Auger processes and may pave the way for the development of diverse ReS2-based high performance photonic and optoelectronic devices.

Original languageEnglish
Article number8672
Pages (from-to)1092-1104
Number of pages13
JournalOptical Materials Express
Volume10
Issue number4
DOIs
StatePublished - 1 Apr 2020
Externally publishedYes

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