Annealing effect on microstructure and mechanical properties of magnetron sputtering Ti-Si-C thin film

Z. S. Chen; H. J. Li; Q. G. Fu; D. Yang; Q. L. Shen

doi:10.1179/1743284713Y.0000000236

Annealing effect on microstructure and mechanical properties of magnetron sputtering Ti-Si-C thin film

Z. S. Chen, H. J. Li, Q. G. Fu, D. Yang, Q. L. Shen

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

To investigate the influence of temperature on nucleation and growth of Ti₃SiC₂, Ti-Si-C thin films were deposited by magnetron sputtering from elemental targets of Ti, Si and C on Si(100) and Al ₂O₃ substrates at temperature <200°C. Subsequently, the as deposited films were annealed in vacuum at 800, 950, 1100 and 1200°C respectively. The as deposited films consisted of amorphous TiC, amorphous Si and free C, as determined by X-ray diffraction and X-ray photoelectron spectroscopy. Annealing in vacuum <950°C resulted in improved crystallinity of TiC and formation of SiC_x and Ti₅Si ₃ phases. However, the Ti₃SiC₂ phase forms in films at 1100°C owing to the increase in Si diffusion coefficient. Moreover, the evolution of hardness and elastics modulus with annealing temperatures was determined by nanoindentation. The results showed a continuous decline of film hardness with increasing annealing temperature due to the formation of Ti ₃SiC₂ and Ti₅Si₃ phases.

Original language	English
Pages (from-to)	975-979
Number of pages	5
Journal	Materials Science and Technology
Volume	29
Issue number	8
DOIs	https://doi.org/10.1179/1743284713Y.0000000236
State	Published - Aug 2013

Keywords

Annealing
Magnetron sputtering
Thin film
TiSiC

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title = "Annealing effect on microstructure and mechanical properties of magnetron sputtering Ti-Si-C thin film",

abstract = "To investigate the influence of temperature on nucleation and growth of Ti3SiC2, Ti-Si-C thin films were deposited by magnetron sputtering from elemental targets of Ti, Si and C on Si(100) and Al 2O3 substrates at temperature <200°C. Subsequently, the as deposited films were annealed in vacuum at 800, 950, 1100 and 1200°C respectively. The as deposited films consisted of amorphous TiC, amorphous Si and free C, as determined by X-ray diffraction and X-ray photoelectron spectroscopy. Annealing in vacuum <950°C resulted in improved crystallinity of TiC and formation of SiCx and Ti5Si 3 phases. However, the Ti3SiC2 phase forms in films at 1100°C owing to the increase in Si diffusion coefficient. Moreover, the evolution of hardness and elastics modulus with annealing temperatures was determined by nanoindentation. The results showed a continuous decline of film hardness with increasing annealing temperature due to the formation of Ti 3SiC2 and Ti5Si3 phases.",

keywords = "Annealing, Magnetron sputtering, Thin film, TiSiC",

author = "Chen, {Z. S.} and Li, {H. J.} and Fu, {Q. G.} and D. Yang and Shen, {Q. L.}",

year = "2013",

month = aug,

doi = "10.1179/1743284713Y.0000000236",

language = "英语",

volume = "29",

pages = "975--979",

journal = "Materials Science and Technology",

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publisher = "SAGE Publications Inc.",

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TY - JOUR

T1 - Annealing effect on microstructure and mechanical properties of magnetron sputtering Ti-Si-C thin film

AU - Chen, Z. S.

AU - Li, H. J.

AU - Fu, Q. G.

AU - Yang, D.

AU - Shen, Q. L.

PY - 2013/8

Y1 - 2013/8

N2 - To investigate the influence of temperature on nucleation and growth of Ti3SiC2, Ti-Si-C thin films were deposited by magnetron sputtering from elemental targets of Ti, Si and C on Si(100) and Al 2O3 substrates at temperature <200°C. Subsequently, the as deposited films were annealed in vacuum at 800, 950, 1100 and 1200°C respectively. The as deposited films consisted of amorphous TiC, amorphous Si and free C, as determined by X-ray diffraction and X-ray photoelectron spectroscopy. Annealing in vacuum <950°C resulted in improved crystallinity of TiC and formation of SiCx and Ti5Si 3 phases. However, the Ti3SiC2 phase forms in films at 1100°C owing to the increase in Si diffusion coefficient. Moreover, the evolution of hardness and elastics modulus with annealing temperatures was determined by nanoindentation. The results showed a continuous decline of film hardness with increasing annealing temperature due to the formation of Ti 3SiC2 and Ti5Si3 phases.

AB - To investigate the influence of temperature on nucleation and growth of Ti3SiC2, Ti-Si-C thin films were deposited by magnetron sputtering from elemental targets of Ti, Si and C on Si(100) and Al 2O3 substrates at temperature <200°C. Subsequently, the as deposited films were annealed in vacuum at 800, 950, 1100 and 1200°C respectively. The as deposited films consisted of amorphous TiC, amorphous Si and free C, as determined by X-ray diffraction and X-ray photoelectron spectroscopy. Annealing in vacuum <950°C resulted in improved crystallinity of TiC and formation of SiCx and Ti5Si 3 phases. However, the Ti3SiC2 phase forms in films at 1100°C owing to the increase in Si diffusion coefficient. Moreover, the evolution of hardness and elastics modulus with annealing temperatures was determined by nanoindentation. The results showed a continuous decline of film hardness with increasing annealing temperature due to the formation of Ti 3SiC2 and Ti5Si3 phases.

KW - Annealing

KW - Magnetron sputtering

KW - Thin film

KW - TiSiC

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U2 - 10.1179/1743284713Y.0000000236

DO - 10.1179/1743284713Y.0000000236

M3 - 文章

AN - SCOPUS:84880550691

SN - 0267-0836

VL - 29

SP - 975

EP - 979

JO - Materials Science and Technology

JF - Materials Science and Technology

IS - 8

ER -

Annealing effect on microstructure and mechanical properties of magnetron sputtering Ti-Si-C thin film

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Keywords

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