Advancing energy storage capabilities in 0.7BNST(1-x)-0.3BLMNx lead-free dielectric ceramic materials

Guangzhi Dong, Yaming Jin, Xiaorong Yang, Luyao Wang, Yifan Zhang, Yi Quan, Chunlong Fei, Tianlong Zhao, Yang Liu, Rusen Yang, Biaolin Peng, Huiqing Fan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Lead-free ferroelectric ceramics with a composition of 0.7(Bi0.5Na0.5)0.7Sr0.3Ti(1-x)O3-0.3Ba0.94La0.04(Mg1/3Nb2/3)xO3 (abbreviated as 0.7BNST(1-x)-0.3BL(MN)x, 0 ≤ x ≤ 0.12) were prepared using solid-phase sintering method, involving co-substituting at A and B sites. High recoverable energy density (Wrec) of 3.54 J/cm3 and energy efficiency (η) 85.49% are achieved at an electric field of 270 kV/cm. Furthermore, these ceramics exhibited excellent temperature and cycle stability at 120 kV/cm (within 25 °C–150 °C, Wrec fluctuation range <14 %; under 1∼106 cycles, the Wrec fluctuation range <5 %). In terms of dielectric performance, they exhibited a high dielectric constant (εr∼4540), an extremely low dielectric loss tanδ of <0.04 (30 °C–300 °C), and good temperature stability with Δε/ε150 °C ≤ ±15 % (−19.5 °C–233.4 °C). During the charging and discharging process, these ceramics demonstrated a high energy density (Wd) of 1.2 J/cm3, a power density (PD) of 61.7 MW/cm3, and an extremely short discharge time (t0.9) of approximately ∼0.11 μs. This study has improved the dielectric energy storage performance of BNT-based lead-free piezoelectric ceramics, making them suitable for use in pulse power devices.

Original languageEnglish
Pages (from-to)51911-51918
Number of pages8
JournalCeramics International
Volume50
Issue number23
DOIs
StatePublished - 1 Dec 2024

Keywords

  • Bismuth sodium titanate
  • Dielectric properties
  • Energy storage properties
  • Lead-free piezoelectric ceramics

Fingerprint

Dive into the research topics of 'Advancing energy storage capabilities in 0.7BNST(1-x)-0.3BLMNx lead-free dielectric ceramic materials'. Together they form a unique fingerprint.

Cite this