A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This paper describes a novel method of producing released MEMS devices with large exposed area based on SOl wafers. First, we discussed when the notching effect happens, from our experiments, for 30pm SOl wafer, the gap between lines should be below 14pm to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without 'grass' effect.

Original languageEnglish
Title of host publication4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Pages253-256
Number of pages4
DOIs
StatePublished - 2009
Event4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China
Duration: 5 Jan 20098 Jan 2009

Publication series

Name4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Conference

Conference4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Country/TerritoryChina
CityShenzhen
Period5/01/098/01/09

Fingerprint

Dive into the research topics of 'A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers'. Together they form a unique fingerprint.

Cite this