A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers

Jianbing Xie; Weizheng Yuan; Honglong Chang

doi:10.1109/NEMS.2009.5068571

A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers

Jianbing Xie, Weizheng Yuan, Honglong Chang

School of Mechanical Engineering

Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper describes a novel method of producing released MEMS devices with large exposed area based on SOl wafers. First, we discussed when the notching effect happens, from our experiments, for 30pm SOl wafer, the gap between lines should be below 14pm to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without 'grass' effect.

Original language	English
Title of host publication	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Pages	253-256
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2009.5068571
State	Published - 2009
Event	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China Duration: 5 Jan 2009 → 8 Jan 2009

Publication series

Name	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Conference

Conference	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Country/Territory	China
City	Shenzhen
Period	5/01/09 → 8/01/09

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10.1109/NEMS.2009.5068571

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Xie, J., Yuan, W., & Chang, H. (2009). A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers. In 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 (pp. 253-256). Article 5068571 (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009). https://doi.org/10.1109/NEMS.2009.5068571

@inproceedings{747bc5e1cbd44c2c884f8372ee93df1a,

title = "A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers",

abstract = "This paper describes a novel method of producing released MEMS devices with large exposed area based on SOl wafers. First, we discussed when the notching effect happens, from our experiments, for 30pm SOl wafer, the gap between lines should be below 14pm to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without 'grass' effect.",

author = "Jianbing Xie and Weizheng Yuan and Honglong Chang",

year = "2009",

doi = "10.1109/NEMS.2009.5068571",

language = "英语",

isbn = "9781424446308",

series = "4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009",

pages = "253--256",

booktitle = "4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009",

note = "4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 ; Conference date: 05-01-2009 Through 08-01-2009",

}

Xie, J, Yuan, W & Chang, H 2009, A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers. in 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009., 5068571, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009, pp. 253-256, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009, Shenzhen, China, 5/01/09. https://doi.org/10.1109/NEMS.2009.5068571

A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers. / Xie, Jianbing; Yuan, Weizheng ; Chang, Honglong.
4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. 2009. p. 253-256 5068571 (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper describes a novel method of producing released MEMS devices with large exposed area based on SOl wafers. First, we discussed when the notching effect happens, from our experiments, for 30pm SOl wafer, the gap between lines should be below 14pm to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without 'grass' effect.

AB - This paper describes a novel method of producing released MEMS devices with large exposed area based on SOl wafers. First, we discussed when the notching effect happens, from our experiments, for 30pm SOl wafer, the gap between lines should be below 14pm to initiate notching. Then, the release structure for the large exposed area device is designed, which opens up opportunities for the design of devices with large movement capabilities. A silicon temperature sensor with large exposed area is used to demonstrate the proposed method. Observations of the release structure at various stages of removal confirm our method; the device has been released use the one-step process and the large exposed area cleared without 'grass' effect.

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BT - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

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Y2 - 5 January 2009 through 8 January 2009

ER -

A novel method for the manufacture ofMEMS devices with large exposed area based on SOl wafers

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