A Method to Adjust Dielectric Property of SiC Powder in the GHz Range

The SiC powders by AI or N doping have been synthesized by combustion synthesis, using AI powder and NH₄CI powder as the dopants and polytetrafluoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of AI doped SiC, N doped SiC and the AI and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2-12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure AI or N doping and decrease by the AI and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range.