TY - JOUR
T1 - A double-layer Ag/ZnS:Ag/ZnS/ITO memristor device for artificial synapse
AU - Cao, Yuwei
AU - Xu, Lingyan
AU - Wang, Aoqiu
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2025 Elsevier B.V.
PY - 2025/6/5
Y1 - 2025/6/5
N2 - Intelligent computer capable of learning, memorizing, and flexibly processing information like human brain is one target of future computer development. Memristors are believed to be the key device to break through the von Neumann computer architecture, achieving the fusion of information storage and computation. Chalcogenide material based Ag/ZnS/ITO structure was fabricated by depositing ZnS thin film doped with 12.6 % Ag on ITO. The endurance, data retention, and energy consumption of Ag/ZnS:Ag/ZnS/ITO double-layer devices in DC are superior to Ag/ZnS:Ag/ITO single-layer thin film memristors. Ag conductive filaments were revealed to preferentially perform rupture and rejuvenation in ZnS-Ag intermediate layer, indicating the resistive switching mechanism during the resistive switching process. The Ag/ZnS:Ag/ZnS/ITO double-layer device exhibits short-term synaptic plasticity with a delayed exponential decay of current following voltage pulses, suggesting inertial motion-induced EPSC/IPSC generation. Also, the device's conductance saturation and resistance tuning, akin to biological synapse learning, is achieved through high-energy pulses promoting the formation of conductive filaments. The Ag/ZnS:Ag/ZnS/ITO double-layer device could serve as an optimized electronic synapse for the potential application in the future bionic circuits, holding great promise for advancing the application fields of artificial intelligence and energy-efficient computing systems.
AB - Intelligent computer capable of learning, memorizing, and flexibly processing information like human brain is one target of future computer development. Memristors are believed to be the key device to break through the von Neumann computer architecture, achieving the fusion of information storage and computation. Chalcogenide material based Ag/ZnS/ITO structure was fabricated by depositing ZnS thin film doped with 12.6 % Ag on ITO. The endurance, data retention, and energy consumption of Ag/ZnS:Ag/ZnS/ITO double-layer devices in DC are superior to Ag/ZnS:Ag/ITO single-layer thin film memristors. Ag conductive filaments were revealed to preferentially perform rupture and rejuvenation in ZnS-Ag intermediate layer, indicating the resistive switching mechanism during the resistive switching process. The Ag/ZnS:Ag/ZnS/ITO double-layer device exhibits short-term synaptic plasticity with a delayed exponential decay of current following voltage pulses, suggesting inertial motion-induced EPSC/IPSC generation. Also, the device's conductance saturation and resistance tuning, akin to biological synapse learning, is achieved through high-energy pulses promoting the formation of conductive filaments. The Ag/ZnS:Ag/ZnS/ITO double-layer device could serve as an optimized electronic synapse for the potential application in the future bionic circuits, holding great promise for advancing the application fields of artificial intelligence and energy-efficient computing systems.
KW - Memristor
KW - Resistive switching mechanism
KW - Switching storage characteristics
KW - Synaptic plasticity
KW - ZnS thin film
UR - http://www.scopus.com/inward/record.url?scp=105005254891&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2025.181021
DO - 10.1016/j.jallcom.2025.181021
M3 - 文章
AN - SCOPUS:105005254891
SN - 0925-8388
VL - 1031
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 181021
ER -
