Abstract
The SiC/N solid solution powders were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene as the chemical activator. XRD, SEM, EDS and Raman spectra were utilized in analyzing phases, morphology, and chemical composition. Results indicate that no Si3N4 phase is generated and lattice constant of the prepared powders decreases with increasing NH4Cl content due to the N doping arising from decomposition of NH4Cl. The electric permittivities of prepared powders were determined in the frequency range of 8.2-12.4 GHz. The electric permittivities of prepared powders increase with increasing NH4Cl content. The mechanism of dielectric loss by doping has been discussed.
Original language | English |
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Pages (from-to) | 644-647 |
Number of pages | 4 |
Journal | Journal of Alloys and Compounds |
Volume | 476 |
Issue number | 1-2 |
DOIs | |
State | Published - 12 May 2009 |
Keywords
- Combustion synthesis (CS)
- Dielectric property
- Silicon carbide