TY - JOUR
T1 - A comparison of LaAlO3/SrTiO3 heterointerfaces grown by spin coating and pulsed laser deposition methods
AU - Li, Ming
AU - Yang, Ruishu
AU - Zhao, Yang
AU - Wang, Shuanhu
AU - Jin, Kexin
N1 - Publisher Copyright:
© 2020
PY - 2021/3/15
Y1 - 2021/3/15
N2 - The two dimensional electron gas (2DEG) exhibits a considerable potential in all-oxide electronics due to the emergence of novel physical phenomena at the typical LaAlO3/SrTiO3 (LAO/STO) heterointerfaces. However, the quality and property of 2DEG are distinctly influenced by the preparation method. Herein, we compare the pulsed laser deposition (PLD) and spin coating method by obtaining high-quality 2DEGs. The comparative studies show that all the LAO/STO heterointerfaces exhibit a perfect metallic conductive behavior under the similar thickness. Moreover, the results by SC exhibit smaller sheet resistance and higher mobility, which is attributed to fewer defect states at heterointerfaces because the chemical method can effectively avoid the ablation of high-energy plume in PLD process. Therefore, our works provide a promising fabrication method for oxide heterointerfaces with a convenient, gentle, large scale and low cost, expanding the way for the application of all-oxide electronic devices.
AB - The two dimensional electron gas (2DEG) exhibits a considerable potential in all-oxide electronics due to the emergence of novel physical phenomena at the typical LaAlO3/SrTiO3 (LAO/STO) heterointerfaces. However, the quality and property of 2DEG are distinctly influenced by the preparation method. Herein, we compare the pulsed laser deposition (PLD) and spin coating method by obtaining high-quality 2DEGs. The comparative studies show that all the LAO/STO heterointerfaces exhibit a perfect metallic conductive behavior under the similar thickness. Moreover, the results by SC exhibit smaller sheet resistance and higher mobility, which is attributed to fewer defect states at heterointerfaces because the chemical method can effectively avoid the ablation of high-energy plume in PLD process. Therefore, our works provide a promising fabrication method for oxide heterointerfaces with a convenient, gentle, large scale and low cost, expanding the way for the application of all-oxide electronic devices.
KW - A1. Growth method
KW - A1. LaAlOSrTiO heterointerfaces
KW - A3. Pulsed laser deposition
KW - A3. Spin coating method
KW - B3. Two dimensional electron gas
UR - http://www.scopus.com/inward/record.url?scp=85099503044&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2020.125912
DO - 10.1016/j.jcrysgro.2020.125912
M3 - 文章
AN - SCOPUS:85099503044
SN - 0022-0248
VL - 558
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125912
ER -