2D/3D heterojunction engineering at the buried interface towards high-performance inverted methylammonium-free perovskite solar cells

Haiyun Li, Cong Zhang, Cheng Gong, Daliang Zhang, Hong Zhang, Qixin Zhuang, Xuemeng Yu, Shaokuan Gong, Xihan Chen, Jiabao Yang, Xuanhua Li, Ru Li, Jingwei Li, Jinfei Zhou, Hua Yang, Qianqian Lin, Junhao Chu, Michael Grätzel, Jiangzhao Chen, Zhigang Zang

Research output: Contribution to journalArticlepeer-review

247 Scopus citations

Abstract

The main bottlenecks limiting the photovoltaic performance and stability of inverted perovskite solar cells (PSCs) are trap-assisted non-radiative recombination losses and photochemical degradation at the interface between perovskite and charge-transport layers. We propose a strategy to manipulate the crystallization of methylammonium-free perovskite by incorporating a small amount of 2-aminoindan hydrochloride into the precursor inks. This additive also modulates carrier recombination and extraction dynamics at the buried interface via the formation of a bottom-up two-dimensional/three-dimensional heterojunction. The resultant inverted PSC achieves a power conversion efficiency of 25.12% (certified 24.6%) at laboratory scale (0.09 cm2) and 22.48% at a larger area (1 cm2) with negligible hysteresis. More importantly, the resulting unencapsulated devices show superior operational stability, maintaining >98% of their initial efficiency of >24% after 1,500 hours of continuous maximum power point tracking under simulated AM1.5 illumination. Meanwhile, the encapsulated devices retain >92% of initial performance for 1,200 hours under the damp-heat test (85 °C and 85% relative humidity).

Original languageEnglish
Pages (from-to)946-955
Number of pages10
JournalNature Energy
Volume8
Issue number9
DOIs
StatePublished - Sep 2023

Fingerprint

Dive into the research topics of '2D/3D heterojunction engineering at the buried interface towards high-performance inverted methylammonium-free perovskite solar cells'. Together they form a unique fingerprint.

Cite this