X-ray photoelectron spectroscopy study of La-modified Bi2Ti 2O7 thin film

Y. Zhang; H. Wang; S. X. Shang; X. H. Xu; X. N. Yang; W. M. Liu

doi:10.1016/j.matlet.2003.08.017

X-ray photoelectron spectroscopy study of La-modified Bi₂Ti ₂O₇ thin film

Y. Zhang
, H. Wang
, S. X. Shang
, X. H. Xu
, X. N. Yang
, W. M. Liu

Shandong University
Shandong Institute of Education
CAS - Lanzhou Institute of Chemical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

Bi₂Ti₂O₇ (BTO) thin films have attracted attention because of its high dielectric constant and good insulating property. Bi₂Ti₂O₇ is an unstable phase in the process of the Bi₄Ti₃O₁₂ formation, and the phase structure can be stabilized by ionic modification. Bi₂Ti ₂O₇ and La-modified Bi₂Ti₂O ₇ thin films were prepared on Si (100) substrates by metalorganic decomposition (MOD). X-ray photoelectron spectroscopy (XPS) results indicated influence of oxygen vacancies and substituting Bi atoms with some La atoms. We investigated difference between Bi₄Ti₃O₁₂ and Bi₂Ti₂O₇ thin films. For (La_xBi _1-x)₂Ti₂O₇ thin films (BLT), phase stability is related to La modification.

源语言	英语
页（从-至）	1056-1058
页数	3
期刊	Materials Letters
卷	58
期	6
DOI	https://doi.org/10.1016/j.matlet.2003.08.017
出版状态	已出版 - 2月 2004
已对外发布	是

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10.1016/j.matlet.2003.08.017

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@article{e2772e3c53a04de7b16235da0b8a2a37,

title = "X-ray photoelectron spectroscopy study of La-modified Bi2Ti 2O7 thin film",

abstract = "Bi2Ti2O7 (BTO) thin films have attracted attention because of its high dielectric constant and good insulating property. Bi2Ti2O7 is an unstable phase in the process of the Bi4Ti3O12 formation, and the phase structure can be stabilized by ionic modification. Bi2Ti 2O7 and La-modified Bi2Ti2O 7 thin films were prepared on Si (100) substrates by metalorganic decomposition (MOD). X-ray photoelectron spectroscopy (XPS) results indicated influence of oxygen vacancies and substituting Bi atoms with some La atoms. We investigated difference between Bi4Ti3O12 and Bi2Ti2O7 thin films. For (LaxBi 1-x)2Ti2O7 thin films (BLT), phase stability is related to La modification.",

keywords = "La-modified BiTiO, MOD, Thin film, XPS",

author = "Y. Zhang and H. Wang and Shang, \{S. X.\} and Xu, \{X. H.\} and Yang, \{X. N.\} and Liu, \{W. M.\}",

year = "2004",

month = feb,

doi = "10.1016/j.matlet.2003.08.017",

language = "英语",

volume = "58",

pages = "1056--1058",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - X-ray photoelectron spectroscopy study of La-modified Bi2Ti 2O7 thin film

AU - Zhang, Y.

AU - Wang, H.

AU - Shang, S. X.

AU - Xu, X. H.

AU - Yang, X. N.

AU - Liu, W. M.

PY - 2004/2

Y1 - 2004/2

N2 - Bi2Ti2O7 (BTO) thin films have attracted attention because of its high dielectric constant and good insulating property. Bi2Ti2O7 is an unstable phase in the process of the Bi4Ti3O12 formation, and the phase structure can be stabilized by ionic modification. Bi2Ti 2O7 and La-modified Bi2Ti2O 7 thin films were prepared on Si (100) substrates by metalorganic decomposition (MOD). X-ray photoelectron spectroscopy (XPS) results indicated influence of oxygen vacancies and substituting Bi atoms with some La atoms. We investigated difference between Bi4Ti3O12 and Bi2Ti2O7 thin films. For (LaxBi 1-x)2Ti2O7 thin films (BLT), phase stability is related to La modification.

AB - Bi2Ti2O7 (BTO) thin films have attracted attention because of its high dielectric constant and good insulating property. Bi2Ti2O7 is an unstable phase in the process of the Bi4Ti3O12 formation, and the phase structure can be stabilized by ionic modification. Bi2Ti 2O7 and La-modified Bi2Ti2O 7 thin films were prepared on Si (100) substrates by metalorganic decomposition (MOD). X-ray photoelectron spectroscopy (XPS) results indicated influence of oxygen vacancies and substituting Bi atoms with some La atoms. We investigated difference between Bi4Ti3O12 and Bi2Ti2O7 thin films. For (LaxBi 1-x)2Ti2O7 thin films (BLT), phase stability is related to La modification.

KW - La-modified BiTiO

KW - MOD

KW - Thin film

KW - XPS

UR - https://www.scopus.com/pages/publications/0347654961

U2 - 10.1016/j.matlet.2003.08.017

DO - 10.1016/j.matlet.2003.08.017

M3 - 文章

AN - SCOPUS:0347654961

SN - 0167-577X

VL - 58

SP - 1056

EP - 1058

JO - Materials Letters

JF - Materials Letters

IS - 6

ER -

X-ray photoelectron spectroscopy study of La-modified Bi2Ti 2O7 thin film

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X-ray photoelectron spectroscopy study of La-modified Bi₂Ti ₂O₇ thin film