Vertical n-type organic transistors with tri(8-hydroxyquinoline) aluminum as collector and fullerene as emitter

A vertical n-type permeable organic metal-base transistor was demonstrated. In this transistor, two kinds of n-type organic semiconductors of fullerene (C₆₀) and tri(8-hydroxyquinoline) aluminum (Alq₃) were used as emitter and collector, respectively, and the metal base was comprised of Al/Al₂O₃/LiF. The formation of a thin oxide film (Al ₂O₃) on the metal aluminum (Al) surface by thermally annealing makes the base self-selected charge carrier characteristic. As a result, the device exhibits low leakage current, and the common-base and common-emitter current gains reach near 1 and 30 at less than 1 V bias, respectively.