Two-Dimensional GeSe as an isostructural and isoelectronic analogue of phosphorene: Sonication-assisted synthesis, chemical stability, and optical properties

Monochalcogenides of germanium (or tin) are considered as isoelectronic and isostructural analogues of black phosphorus. Here, we demonstrate the synthesis of atomically thin GeSe by direct sonication-assisted liquid phase exfoliation (LPE) of bulk microcrystalline powders in organic solvents. The thickness of the GeSe sheets is dependent on the exfoliation conditions, and highly crystalline few-layer GeSe sheets of 4-10 layer stacks with lateral sizes over 200 nm were obtained. In ambient atmosphere, the LPE sheets deposited on the substrate demonstrate strong resistance against degradation, while decomposition into elemental Ge and Se nanostructures occurs at a moderate rate for ethanol dispersions. Density functional theory calculation together with optical characterizations confirm the blue-shifted bandgap for the GeSe sheets as a result of strong quantum confinement effect. In addition, we show that the few-layer GeSe sheets with favorable optical bandgap allow for efficient solar light harvesting for photocurrent generation based on a photoelectrochemical cell. Our joint theoretical and experimental results suggest that GeSe sheets of atomic thickness could be a new two-dimensional semiconductor that can be exploited for potential applications in optoelectronics and photonics.