摘要
Developing a universal strategy of the p–n homojunction engineering that could significantly boost electron mobility of electron transport layer (ETL) by two orders of magnitude. Proposing a new mechanism based on p–n homojunction to explain inhibited carrier loss at buried interface. Setting a new performance benchmark as high as 25.50% for planar perovskite solar cells employing TiO2 as ETLs.
| 源语言 | 英语 |
|---|---|
| 期刊论文编号 | 191 |
| 期刊 | Nano-Micro Letters |
| 卷 | 16 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 12月 2024 |
学术指纹
探究 'TiO2 Electron Transport Layer with p–n Homojunctions for Efficient and Stable Perovskite Solar Cells' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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