Theoretical prediction of the full-stage creep and lifetime of sintered nano-silver based on entropy-generation and pore-synergistic evolution

In high-power electronic packaging, the warping of components can lead to creep failure in sintered nano-silver solder layers, thereby affecting the reliability of electronic devices. Therefore, accurately describing the creep-induced failure mechanism of sintered nano-silver is crucial. In this work, the evolution of defects in sintered nano-silver throughout the full-stage creep process was described using theoretical methods that incorporate entropy generation. Subsequently, the dynamic law of porosity was quantitatively derived using the Ramakrishnan model, revealing the decisive role that porosity plays in the creep evolution process. Finally, a creep model was put forward, linking defect evolution to the accurate description of the full-stage creep strain and creep life. When the prediction results of this model were compared with experimental data experimental data in the literature and the creep life obtained by the Monkman-Grant relationship, it was found that the accuracy of the proposed model significantly surpasses that of the Monkman-Grant relationship in predicting the creep life. In addition, the proposed model can determine creep life based on the creep strain rate during the full-stage creep process, which enhances its universality and convenience for predicting electronic device performance. This provides a novel approach for the reliability design of packaging structures using sintered nano-silver.