TY - GEN
T1 - The modeling of Radioisotope Micro Batteries for microsystems
AU - Sun, Lei
AU - Yuan, Wei Z.
AU - Qiao, Da Y.
PY - 2006
Y1 - 2006
N2 - Conventional direct conversion devices of Radioisotope Micro Battery (RMB) suffer from small surface area and unreliability. In order to solve these problems, a method, which is verified with simulation results, is introduced for modeling the direct conversion devices. The fundamental structure of RMB is presented, and the equations of current are founded. The novel direct conversion device of vertical wall array is demonstrated. As a result, 171% increase of the surface area is acquired and the reliability is enhanced owing to the electro plating section. Simulation is performed to investigate the performance of RMB with the source density of 1mCi/mm2. Optimization of the method has resulted in that the optimum doping concentrations are NA=10 17/cm3 and ND=1017/Cm3. Simulation results predicts that the method based the novel direct conversion device can get a Voc (open circuit voltage) of 180mV, a J sc (short circuit current density) of 3nA/mm2 and P m (output power density) of 0.4nW/mm2 within a volume of 0.1mm 3.
AB - Conventional direct conversion devices of Radioisotope Micro Battery (RMB) suffer from small surface area and unreliability. In order to solve these problems, a method, which is verified with simulation results, is introduced for modeling the direct conversion devices. The fundamental structure of RMB is presented, and the equations of current are founded. The novel direct conversion device of vertical wall array is demonstrated. As a result, 171% increase of the surface area is acquired and the reliability is enhanced owing to the electro plating section. Simulation is performed to investigate the performance of RMB with the source density of 1mCi/mm2. Optimization of the method has resulted in that the optimum doping concentrations are NA=10 17/cm3 and ND=1017/Cm3. Simulation results predicts that the method based the novel direct conversion device can get a Voc (open circuit voltage) of 180mV, a J sc (short circuit current density) of 3nA/mm2 and P m (output power density) of 0.4nW/mm2 within a volume of 0.1mm 3.
KW - Direct conversion devices
KW - Electro plating section
KW - Radioisotope micro battery
KW - Vertical wall array
UR - https://www.scopus.com/pages/publications/46149088487
U2 - 10.1109/NEMS.2006.334664
DO - 10.1109/NEMS.2006.334664
M3 - 会议稿件
AN - SCOPUS:46149088487
SN - 1424401402
SN - 9781424401406
T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
SP - 178
EP - 181
BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
T2 - 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Y2 - 18 January 2006 through 21 January 2006
ER -