The investigation of defects in HgCdTe crystals grown by SSR technique

HgCdTe is a very important material for infrared detector. The Solid State Recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.