摘要
Radiation resistant chip based on commercial semiconductor process can be achieved by modifying the circuit diagram and the layout topology of a chip. In the paper, four technologies such as double interlock cell, Triple Modular Redundancy, and RC filter have been analyzed. Combining the four technologies, a novel radiation resistant D flip flop has been designed. At last, and simulation have been adopted to demonstrate the performance of its radiation resistivity.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 79-84 |
| 页数 | 6 |
| 期刊 | Hedianzixue Yu Tance Jishu/Nuclear Electronics and Detection Technology |
| 卷 | 33 |
| 期 | 1 |
| 出版状态 | 已出版 - 1月 2013 |
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