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Synthesis, Structure, Band Gap, and Near-Infrared Photosensitivity of a New Chalcogenide Crystal, (NH4)4Ag12Sn7Se22

  • Ke Zhao Du
  • , Xing Hui Qi
  • , Mei Ling Feng
  • , Jian Rong Li
  • , Xing Zhi Wang
  • , Cheng Feng Du
  • , Guo Dong Zou
  • , Meng Wang
  • , Xiao Ying Huang
  • CAS - Fujian Institute of Research on the Structure of Matter
  • Fuzhou University
  • Nanyang Technological University
  • University of Chinese Academy of Sciences

科研成果: 期刊稿件文章同行评审

15 引用 (Scopus)

摘要

A new chalcogenide crystal, (NH4)4Ag12Sn7Se22 (FJSM-STS), has been solvothermally synthesized. The crystal structure, which is composed of arrays of [Sn3Se9]n6n- chains interconnecting [SnAg6Se10]n10n- and [Ag3Se4]n5n- layers, is unprecedented among the reported A/Ag/Sn/Q (A = cation; Q = S, Se, and Te) compounds. Optical absorption together with theoretical calculations of the band structure indicate a direct band gap of 1.21 eV for FJSM-STS, which is close to the ideal band gap to maximize the photoconversion efficiency proposed by Shockley and Queisser. The toxic-metal-free crystal of FJSM-STS exhibits obvious photosensitivity in the near-infrared range. The variates of power and temperature on the photosensitivity have been studied.

源语言英语
页(从-至)5110-5112
页数3
期刊Inorganic Chemistry
55
11
DOI
出版状态已出版 - 6 6月 2016
已对外发布

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