Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure

B. C. Luo; J. Wang; M. M. Duan; K. X. Jin; C. L. Chen

doi:10.1016/j.matlet.2014.01.074

Synthesis and transport properties of Ca₃Co₄O ₉/ZnO heterostructure

B. C. Luo
, J. Wang
, M. M. Duan
, K. X. Jin
, C. L. Chen

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Highly c-axis-oriented Ca₃Co₄O₉ (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca₃Co ₄O₉ film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca₃Co₄O₉/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

源语言	英语
页（从-至）	133-135
页数	3
期刊	Materials Letters
卷	120
DOI	https://doi.org/10.1016/j.matlet.2014.01.074
出版状态	已出版 - 1 4月 2014

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10.1016/j.matlet.2014.01.074

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title = "Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure",

abstract = "Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.",

keywords = "Electrical properties, Heterostructures, Thermoelectric materials",

author = "Luo, \{B. C.\} and J. Wang and Duan, \{M. M.\} and Jin, \{K. X.\} and Chen, \{C. L.\}",

year = "2014",

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doi = "10.1016/j.matlet.2014.01.074",

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T1 - Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure

AU - Luo, B. C.

AU - Wang, J.

AU - Duan, M. M.

AU - Jin, K. X.

AU - Chen, C. L.

PY - 2014/4/1

Y1 - 2014/4/1

N2 - Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

AB - Highly c-axis-oriented Ca3Co4O9 (CCO) and ZnO layers were successively grown on Silicon substrates using the pulsed laser deposition (PLD) technique. The in-plane resistivity of Ca3Co 4O9 film exhibits a metal-insulator transition at 120 K, and the positive Seebeck coefficient is about 119.3 μV/K at 300 K. The electrical transport properties of Ca3Co4O9/ZnO heterostructure demonstrate a rectifying behavior within the temperature range of 45-300 K and the diffusion potential decreases with increasing temperature.

KW - Electrical properties

KW - Heterostructures

KW - Thermoelectric materials

UR - https://www.scopus.com/pages/publications/84893445306

U2 - 10.1016/j.matlet.2014.01.074

DO - 10.1016/j.matlet.2014.01.074

M3 - 文章

AN - SCOPUS:84893445306

SN - 0167-577X

VL - 120

SP - 133

EP - 135

JO - Materials Letters

JF - Materials Letters

ER -

Synthesis and transport properties of Ca3Co4O 9/ZnO heterostructure

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Synthesis and transport properties of Ca₃Co₄O ₉/ZnO heterostructure