TY - JOUR
T1 - Study on the electromagnetic interference shielding effectiveness of TiN film
AU - Lu, Linlin
AU - Luo, Fa
AU - Qing, Yuchang
AU - Zhou, Wancheng
AU - Zhu, Dongmei
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - TiN films were prepared by direct current reactive magnetron sputtering, and the effect of substrate temperatures (25, 100, 200 and 300 °C) on the resistivity and electromagnetic interference shielding effectiveness of TiN films was investigated. The results showed that as the substrate temperature rose from 25 to 200 °C, the resistivity of TiN films dropped from 968 to 285 µΩ cm, and then increased to 349 µΩ cm at 300 °C. The total shielding effectiveness SET in the X-band frequency range of TiN films with the same thickness (1.1 ± 0.03 µm) showed an uptrend with the substrate temperature rise and was associated with the resistivity of the films. The lower resistivity led to higher total shielding effectiveness. When the substrate temperature was 200 °C, the SET of TiN films with the thickness at 1.1 µm was highest and more than 20 dB, indicating that TiN films could serve as EMI shielding materials in the X-band, particularly in applications where ultrathin thickness and design flexibility were desired.
AB - TiN films were prepared by direct current reactive magnetron sputtering, and the effect of substrate temperatures (25, 100, 200 and 300 °C) on the resistivity and electromagnetic interference shielding effectiveness of TiN films was investigated. The results showed that as the substrate temperature rose from 25 to 200 °C, the resistivity of TiN films dropped from 968 to 285 µΩ cm, and then increased to 349 µΩ cm at 300 °C. The total shielding effectiveness SET in the X-band frequency range of TiN films with the same thickness (1.1 ± 0.03 µm) showed an uptrend with the substrate temperature rise and was associated with the resistivity of the films. The lower resistivity led to higher total shielding effectiveness. When the substrate temperature was 200 °C, the SET of TiN films with the thickness at 1.1 µm was highest and more than 20 dB, indicating that TiN films could serve as EMI shielding materials in the X-band, particularly in applications where ultrathin thickness and design flexibility were desired.
UR - https://www.scopus.com/pages/publications/85044243121
U2 - 10.1007/s10854-018-8931-5
DO - 10.1007/s10854-018-8931-5
M3 - 文章
AN - SCOPUS:85044243121
SN - 0957-4522
VL - 29
SP - 9052
EP - 9057
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
ER -