Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices

The fabrication and the performance of PMMA resistive switching device have been studied by using FR-4 (copper), PMMA (poly methyl methacrylate) and aluminum as the active anode, the solid electrolyte and the inert cathode respectively. By etching the copper surface with the acid solution [4HNO₃ + 11H₃PO₄ (98 %) + 5CH₃COOH] at 60 °C for 2 min, a good performance of Cu/PMMA/Al device, which can switch until 2300 cycles, has been realized. The spin rate for forming the PMMA coating plays a decisive role in the performance of Cu/PMMA/Al device. The best performance of the Cu/PMMA/Al device was obtained only when the spin rate of deposition of PMMA reached 4000 rpm (low thickness).