Structure designable Al-doped SiOC polymer-derived ceramic for efficient pressure and high-temperature difunctional detection

Sensors for general conditions in industrial production and life have been widespread, but rarely suited for extreme environments. The traditional method is replaced by digital light processing (DLP) to obtain unique structure customization. Doping Al promotes phase transition and hybridized transformation as well as affects the valence band value. Ascribed to the existed conductive phase and generated tunneling-percolation conduction effect, the champion piezoresistivity and gauge factor of the 2 wt% aluminum acetylacetonate doped SiOC (SiAlOC-2) are 75.44 % and −647.49. The addition of additives improves mechanical and pressure-temperature response performance, resulting in optimal compressive strength and Young's modulus reaching 40.86 MPa and 16.55 GPa. Both SiOC and SiAlOC-2 exhibit benign temperature monitoring reaching 1000 ℃. However, the resistance-temperature variation rule of SiOC is suitable for the thermistor equation while the counterpart SiAlOC-2 abides by the Steinhart-Hart formula. Consequently, DLP technology offers a promising approach to designing mutable structures to fabricate multifunctional sensors.