摘要
The damage threshold and morphology of sapphire crystal (0001) have been investigated by nanosecond (ns), picosecond (ps), and femtosecond (fs) laser pulse at 800 nm based on the mechanical, thermal, and photon-electrical properties of sapphire crystal. The star-like crack which is associated with the point group of sapphire crystal is induced by ns laser pulse, and the cross crack is induced by ps laser pulse and linelike crack is induced by fs laser pulse, which may be related to the preferred dislocation from anisotropic stain tensor.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 1121-1125 |
| 页数 | 5 |
| 期刊 | Guangzi Xuebao/Acta Photonica Sinica |
| 卷 | 35 |
| 期 | 8 |
| 出版状态 | 已出版 - 8月 2006 |
| 已对外发布 | 是 |
指纹
探究 'Structural characteristics induced by nanosecond, picosecond, and femtosecond laser pulse in sapphire' 的科研主题。它们共同构成独一无二的指纹。引用此
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