摘要
Due to their low cost and simplified production process, electron-transport-layer-free (ETL-free) perovskite solar cells (PSCs) have attracted great attention recently. However, the performance of ETL-free PSCs is still at a disadvantage compared to cells with a conventional n-i-p structure due to the severe recombination of charge carriers at the perovskite/anode interface. Here, we report a strategy to fabricate stable ETL-free FAPbI3 PSCs by in situ formation of a low dimensional perovskite layer between the FTO and the perovskite. This interlayer gives rise to the energy band bending and reduced defect density in the perovskite film and indirect contact and improved energy level alignment between the anode and perovskite, which facilitates charge carrier transport and collection and suppresses charge carrier recombination. As a result, ETL-free PSCs with a power conversion efficiency (PCE) exceeding 22% are achieved under ambient conditions.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2195-2202 |
| 页数 | 8 |
| 期刊 | Nano Letters |
| 卷 | 23 |
| 期 | 6 |
| DOI | |
| 出版状态 | 已出版 - 22 3月 2023 |
指纹
探究 'Stable Electron-Transport-Layer-Free Perovskite Solar Cells with over 22% Power Conversion Efficiency' 的科研主题。它们共同构成独一无二的指纹。引用此
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