Spin-flip-driven giant magnetotransport in A-type antiferromagnet

The value of angle-dependent magnetoresistance (MR) synergistically and simultaneously depends on the magnitudes of magnetoresistance (MR) and magnetocrystalline anisotropy energy (MAE). In a magnetic material, the concurrence of gigantic angle-dependent MR and MR signals is rather difficult due to weak spin-lattice coupling and small MAE. Here we report the considerable magnetotransport effect in layered A-type antiferromagnetic (AFM) by realigning the spin configurations. Above 3 (8) T, the antiparallel spins of adjacent layers experience a spin-flip transition to a parallel alignment along the axis ( plane). Theoretical calculations reveal that the energy band gap narrows from 0.39 to 0.11 eV, accompanying a transition from semiconductor (high- state) and half semiconductor (low- state), respectively. Thus, a gigantic negative MR ratio of −90% is obtained at 10 K. More importantly, the decrement of along is far quicker than that of because the MAE of the Ising-like ferromagnetic (FM) state is lower than that of XY-like FM. The distinct trends result in the angle-dependent MR ratio of 732% at 10 K. These findings unravel the intrinsic origin of magnetoresistance in and will stimulate us to explore the -sensitive transport property in more AFM materials.