Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Cd _1-xMn _xTe (CdMnTe) crystals were grown by the solution technique using Te as a solvent and the growth was performed in a vertical Bridgman arrangement with the accelerated crucible rotation technique (ACRT). Ingot in the diameter of 30 mm and length of 60 mm was obtained. As-grown crystals showed a resistivity of 2.065×10 ¹⁰ Ω cm and mobility life time product of electrons of 1.61×10 ^-3 cm ² V ^-1. PL spectrum and IR transmittance measurements revealed that the as-grown CdMnTe possessed high crystalline quality. A CdMnTe detector was fabricated with planar configuration structure, which showed a resolution of 12.51% of the ²⁴¹Am at 59.5 keV peak. In conclusion, the Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CdMnTe crystal and to produce high quality detector-grade CdMnTe crystal with good spectroscopic performance.