TY - JOUR
T1 - Solar-blind UV detection by ultra-wide-bandgap 4HCB organic single crystal semiconductor
AU - Zhao, Dou
AU - Ma, Donghao
AU - Xu, Meng
AU - Liu, Linyue
AU - Li, Yang
AU - Li, Fangpei
AU - Zhang, Binbin
AU - Zhu, Menghua
AU - Xu, Yadong
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2022 Author(s).
PY - 2022/1/3
Y1 - 2022/1/3
N2 - In this work, the solar-blind ultraviolet (UV) detection performance of organic single crystals 4-hydroxycyanobenzene (4HCB) is demonstrated. The ultra-wide bandgap and low dark current make 4HCB an important candidate for this application. Detectors with two electrode configurations, i.e., sandwiched electrode (SWE) and interdigital electrode (IDE), are fabricated based on 4HCB single crystals and measured under the illumination of 254 nm-UV light. Apparently, the IDE detector exhibits a responsivity R of 14 000 μA W-1 at a bias voltage of 1000 V, which is 2000 times higher than that of the SWE detector, due to its enhanced photoconductive gain by the surface layer edge states. To explore the possibility for the space UV detection applications in the radiation environment, the effect of neutron radiation on 4HCB detector performance is revealed. The point defects introduced by fast neutrons, mainly H vacancies, dominate the variation of the Fermi energy level and electric properties; however, this effect on photodetection is limited when the neutron flux is below 1013 n cm-2.
AB - In this work, the solar-blind ultraviolet (UV) detection performance of organic single crystals 4-hydroxycyanobenzene (4HCB) is demonstrated. The ultra-wide bandgap and low dark current make 4HCB an important candidate for this application. Detectors with two electrode configurations, i.e., sandwiched electrode (SWE) and interdigital electrode (IDE), are fabricated based on 4HCB single crystals and measured under the illumination of 254 nm-UV light. Apparently, the IDE detector exhibits a responsivity R of 14 000 μA W-1 at a bias voltage of 1000 V, which is 2000 times higher than that of the SWE detector, due to its enhanced photoconductive gain by the surface layer edge states. To explore the possibility for the space UV detection applications in the radiation environment, the effect of neutron radiation on 4HCB detector performance is revealed. The point defects introduced by fast neutrons, mainly H vacancies, dominate the variation of the Fermi energy level and electric properties; however, this effect on photodetection is limited when the neutron flux is below 1013 n cm-2.
UR - https://www.scopus.com/pages/publications/85123052636
U2 - 10.1063/5.0077928
DO - 10.1063/5.0077928
M3 - 文章
AN - SCOPUS:85123052636
SN - 0003-6951
VL - 120
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 1
M1 - 013301
ER -