Simulation and analysis of single-particle effects in 14nm FinFET bulk-silicon devices

Single Event Effects (SEE), induced by cosmic rays or high-energy particle interactions, manifest as transient or permanent functional disruptions in integrated circuits. With the adoption of FinFET (Fin Field-Effect Transistor) technology in advanced nodes-enabling superior performance and reduced power consumption-the evaluation of radiation sensitivity becomes imperative. This study utilizes TCAD simulations to analyze SEE mechanisms in 14nm bulk silicon FinFET devices. Through systematic investigation of heavy ion irradiation parameters (incident position, angle, and Linear Energy Transfer) under varying bias conditions, the results identify the drain region as the primary sensitivity zone, demonstrating a reduced sensitive area compared to planar transistor architectures. The analysis confirms that these ion strike parameters critically govern the amplitude and temporal characteristics of single-event transient pulses. The findings establish foundational insights for mitigating SEE vulnerabilities in FinFET technology through optimized charge collection management and radiation-hardened structural design.