摘要
Antimony sulfide as a cost-effective, low-toxic, and earth-abundant solar cell absorber with the desired bandgap was successfully deposited using a scalable close space sublimation technique. The deposition process can separately control the substrate and source temperature with better engineering of the absorber quality. The device performance can reach 3.8% with the configuration of glass/FTO/CdS/Sb2S3/graphite back contact. The defect formation energy and the corresponding transition levels were investigated in detail using theoretical calculations. Our results suggest that Sb2S3 exhibits intrinsic p-type owing to S-on-Sb antisites (SSb) and the device performance is limited by the S vacancies. The localized conduction characterization at nanoscale shows that the non-cubic Sb2S3 has conductive grains and benign grain boundaries. The study of the defects, microstructure, and nanoscale conduction behavior suggests that Sb2S3 could be a promising photovoltaic candidate for scalable manufacturing.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 041105 |
| 期刊 | APL Materials |
| 卷 | 7 |
| 期 | 4 |
| DOI | |
| 出版状态 | 已出版 - 1 4月 2019 |
| 已对外发布 | 是 |
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