摘要
Using 940 nm diode laser as pumping source, a passively Q-switched Yb:YAG thin disk laser by Cr4+:YAG was realized. The Yb:YAG disk with 500 μm thickness was employed, the Yb3+ atom fraction is 10%. The distribution of temperature in Yb:YAG disk with direct water cooling and SiC cooling with different thickness was theoretically simulated, respectively. The maximum output power of 2.8 W at 1030 nm was obtained with 800 μm SiC cooling, the output power has increased by 40% than that obtained with direct water cooling. The initial transmission of Cr4+:YAG crystal and the output coupling rate were optimized by Degnan's theory. With the initial transmission of Cr4+:YAG crystal of 93% and the output coupling rate of 10%, a stable pulse train of 1.95 W averaged output power with a pulse energy of 1.2 mJ and pulse width of 74 ns were obtained with 800 μm SiC cooling. The repetition rate is 1.6 kHz, the slope efficiency is 18.1%, and the beam quality Mx2=1.622, My2=1.616.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 0314009 |
| 期刊 | Guangzi Xuebao/Acta Photonica Sinica |
| 卷 | 45 |
| 期 | 3 |
| DOI | |
| 出版状态 | 已出版 - 1 3月 2016 |
| 已对外发布 | 是 |
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