TY - JOUR
T1 - Properties of sputtered CdS and CdTe films and performance of CdTe solar cells as a function of annealing temperature
AU - Guo, Min
AU - Zhu, Xiurong
AU - Li, Hejun
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2015/12
Y1 - 2015/12
N2 - Thin film PV devices were fabricated in FTO/CdS/CdTe/Cu/Au superstrate configuration by RF sputtering of CdS and CdTe films, and CdCl2 activation process was performed at 370, 380 and 390°C, respectively. Morphological studies indicated for the first time that there were numerous holes randomly distributed at the as-deposited CdS/CdTe interface; although the holes were reduced after CdCl2 annealing, the p-n junction was greatly improved. Further, the new concept of solar spectrum window width (ΔEg) for the solar cells was demonstrated, and the ΔEg of CdTe solar cells was found to be extended with increasing annealing temperature. Moreover, the efficiency of CdTe solar cells was dramatically improved from 0.02% to 12.02% as a function of annealing temperature, and the values of J 0 and A were reduced with the optimal values (7.2×10-7 mA/cm2 and 1.87), indicating the primary carrier recombination of the best device was Shockley-Real-Hall mechanism in the space charge region.
AB - Thin film PV devices were fabricated in FTO/CdS/CdTe/Cu/Au superstrate configuration by RF sputtering of CdS and CdTe films, and CdCl2 activation process was performed at 370, 380 and 390°C, respectively. Morphological studies indicated for the first time that there were numerous holes randomly distributed at the as-deposited CdS/CdTe interface; although the holes were reduced after CdCl2 annealing, the p-n junction was greatly improved. Further, the new concept of solar spectrum window width (ΔEg) for the solar cells was demonstrated, and the ΔEg of CdTe solar cells was found to be extended with increasing annealing temperature. Moreover, the efficiency of CdTe solar cells was dramatically improved from 0.02% to 12.02% as a function of annealing temperature, and the values of J 0 and A were reduced with the optimal values (7.2×10-7 mA/cm2 and 1.87), indicating the primary carrier recombination of the best device was Shockley-Real-Hall mechanism in the space charge region.
KW - Annealing
KW - II-VI Semiconductors
KW - Magnetron sputtering
KW - Solar cell
UR - https://www.scopus.com/pages/publications/84956689813
U2 - 10.1016/j.mssp.2015.07.088
DO - 10.1016/j.mssp.2015.07.088
M3 - 文章
AN - SCOPUS:84956689813
SN - 1369-8001
VL - 40
SP - 917
EP - 924
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -