@inproceedings{a73883d2be4e4b1f9b25a783eb0c4e0c,
title = "Preparation of N-doped SiC whisker by combustion synthesis",
abstract = "N-doped SiC whiskers with diameters of about 0.2 μm and length of 3-7 μm were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene (PTFE) as the chemical activator. These whiskers are straight and curved morphologies. X-Ray powder diffraction pattern and energy-dispersive spectroscopy (EDS) confirm that the lattice constant of prepared whiskers is smaller than standard value of β-SiC due to the N doping arising.",
keywords = "Combustion synthesis, Whisker, X-ray diffraction",
author = "Su, \{Xiao Lei\} and Jie Xu and Li, \{Zhi Min\} and He, \{Xin Hai\} and Wang, \{Jun Bo\} and Chong Fu and Zhou, \{Wan Cheng\} and Fa Luo",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.197-198.580",
language = "英语",
isbn = "9783037850350",
series = "Advanced Materials Research",
pages = "580--583",
booktitle = "New and Advanced Materials",
note = "2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 ; Conference date: 09-04-2011 Through 11-04-2011",
}