Preparation of iridium films by MOCVD and deposition effectiveness analysis

Yunfeng Hua; Zhaofeng Chen; Litong Zhang; Laifei Cheng

Preparation of iridium films by MOCVD and deposition effectiveness analysis

Yunfeng Hua
, Zhaofeng Chen
, Litong Zhang
, Laifei Cheng

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

10 引用（Scopus）

摘要

Iridium films were prepared by using metalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants. The results show that the molecular structure of precursor is changed when heating blow 190°C for long time, which makes breaking activity of C-H and C-O bond in crease, hence there is notable carbon impurity in the iridium films. When heating precursor and depositing iridium films above 220°C and at 550°C respectively, dense and light iridium films were prepared without graphitic carbon impurity.

源语言	英语
页（从-至）	139-142
页数	4
期刊	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
卷	34
期	1
出版状态	已出版 - 1月 2005

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abstract = "Iridium films were prepared by using metalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants. The results show that the molecular structure of precursor is changed when heating blow 190°C for long time, which makes breaking activity of C-H and C-O bond in crease, hence there is notable carbon impurity in the iridium films. When heating precursor and depositing iridium films above 220°C and at 550°C respectively, dense and light iridium films were prepared without graphitic carbon impurity.",

keywords = "Iridium, Metalorganic chemical vapor deposition, Precursor, Substrates",

author = "Yunfeng Hua and Zhaofeng Chen and Litong Zhang and Laifei Cheng",

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T1 - Preparation of iridium films by MOCVD and deposition effectiveness analysis

AU - Hua, Yunfeng

AU - Chen, Zhaofeng

AU - Zhang, Litong

AU - Cheng, Laifei

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Y1 - 2005/1

N2 - Iridium films were prepared by using metalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants. The results show that the molecular structure of precursor is changed when heating blow 190°C for long time, which makes breaking activity of C-H and C-O bond in crease, hence there is notable carbon impurity in the iridium films. When heating precursor and depositing iridium films above 220°C and at 550°C respectively, dense and light iridium films were prepared without graphitic carbon impurity.

AB - Iridium films were prepared by using metalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants. The results show that the molecular structure of precursor is changed when heating blow 190°C for long time, which makes breaking activity of C-H and C-O bond in crease, hence there is notable carbon impurity in the iridium films. When heating precursor and depositing iridium films above 220°C and at 550°C respectively, dense and light iridium films were prepared without graphitic carbon impurity.

KW - Iridium

KW - Metalorganic chemical vapor deposition

KW - Precursor

KW - Substrates

UR - https://www.scopus.com/pages/publications/14344263559

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SN - 1002-185X

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JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 1

ER -

Preparation of iridium films by MOCVD and deposition effectiveness analysis

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