Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

The deposition of high-quality TiN films on silicon and stainless-steel substrates at low temperature using an improved cathode arc plasma technique was discussed. The TiN thin films were characterized by employing atomic force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy and a nanoindenter. It was observed that the microhardness of the TiN films have a high value up to 41 GPa, which was far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate and microhardness of Tin thin films were discussed.