Point defects in Cd_0.95Zn_0.05Te

A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd_1-xZn_xTe. In Cd _0.95Zn_0.05Te crystals, Cd_i ^̇̇ is found to be the main point defect at high Cd partial pressures, and V″_Cd at low partial pressures. On the Te-rich side, the concentrations of Te_ca^̇̇ and Te _ca^̇ are sufficiently high to significantly influence the electrical properties of Cd_0.95Zn_0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd_0.95Zn_0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd _0.95Zn_0.05Te is suggested following calculations based on the model.