Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal

Qiang Li; Wanqi Jie; Li Fu; Ge Yang; Gangqiang Zha; Tao Wang; Dongmei Zeng

doi:10.1063/1.2213155

Photoluminescence analysis on the indium doped Cd_0.9Zn _0.1Te crystal

Qiang Li
, Wanqi Jie
, Li Fu
, Ge Yang
, Gangqiang Zha
, Tao Wang
, Dongmei Zeng

材料学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

32 引用（Scopus）

摘要

Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAP_s) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [V_Cd-In_Cd]^- singly negative complex and the neutral complex [V_Cd-2In _Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [In_Cd]⁺ donor and Te antisite [Te_Cd] ⁴⁺ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

源语言	英语
文章编号	013518
期刊	Journal of Applied Physics
卷	100
期	1
DOI	https://doi.org/10.1063/1.2213155
出版状态	已出版 - 2006

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title = "Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal",

abstract = "Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.",

author = "Qiang Li and Wanqi Jie and Li Fu and Ge Yang and Gangqiang Zha and Tao Wang and Dongmei Zeng",

year = "2006",

doi = "10.1063/1.2213155",

language = "英语",

volume = "100",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal

AU - Li, Qiang

AU - Jie, Wanqi

AU - Fu, Li

AU - Yang, Ge

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Zeng, Dongmei

PY - 2006

Y1 - 2006

N2 - Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

AB - Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

UR - https://www.scopus.com/pages/publications/33746211169

U2 - 10.1063/1.2213155

DO - 10.1063/1.2213155

M3 - 文章

AN - SCOPUS:33746211169

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013518

ER -

Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal

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Photoluminescence analysis on the indium doped Cd_0.9Zn _0.1Te crystal