Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

High-resistivity In-doped CdZnTe (CZT:In) single crystals were obtained by annealing under Te atmosphere. Photoluminescence spectrum was used to investigate annealed CZT:In single crystals. The results indicated that (D ⁰, X) peak which is related to the crystal quality appeared after annealing. The donor-acceptor pair peak DAP mainly originated from the complex consisted of the donor In⁺_Cd and the acceptor [In ⁺_CdV^2-_Cd]^-. The intensity of DAP peak decreased, which might suggest that the impurities were removed. Moreover, D_complex peak containing two peaks for as-grown CZT:In consisted of Cd vacancy-related (D₁) and dislocation-related (D ₂) defects. However, the intensity of D₂ peak was very low because of the elimination of Cd inclusions after annealing. And the intensity of D₁ peak increased because of the increase of Cd vacancies by evaporating for a long time.