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Phase-Changing in Graphite Assisted by Interface Charge Injection

  • Fei Pan
  • , Kun Ni
  • , Yue Ma
  • , Hongjian Wu
  • , Xiaoyu Tang
  • , Juan Xiong
  • , Yaping Yang
  • , Chuanren Ye
  • , Hong Yuan
  • , Miao Ling Lin
  • , Jiayu Dai
  • , Mengjian Zhu
  • , Ping Heng Tan
  • , Yanwu Zhu
  • , Kostya S. Novoselov
  • University of Science and Technology of China
  • National University of Defense Technology
  • Northwestern Polytechnical University Xian
  • CAS - Institute of Semiconductors
  • University of Manchester
  • National University of Singapore
  • Chongqing 2D Materials Institute

科研成果: 期刊稿件文章同行评审

25 引用 (Scopus)

摘要

Among many phase-changing materials, graphite is probably the most studied and interesting: the rhombohedral (3R) and hexagonal (2H) phases exhibit dramatically different electronic properties. However, up to now the only way to promote 3R to 2H phase transition is through exposure to elevated temperatures (above 1000 °C); thus, it is not feasible for modern technology. In this work, we demonstrate that 3R to 2H phase transition can be promoted by changing the charged state of 3D graphite, which promotes the repulsion between the layers and significantly reduces the energy barrier between the 3R and 2H phases. In particular, we show that charge transfer from lithium nitride (α-Li3N) to graphite can lower the transition temperature down to 350 °C. The proposed interlayer slipping model potentially offers the control over topological states at the interfaces between different phases, making this system even more attractive for future electronic applications.

源语言英语
页(从-至)5648-5654
页数7
期刊Nano Letters
21
13
DOI
出版状态已出版 - 14 7月 2021

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