TY - JOUR
T1 - Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure
AU - Wang, Aoqiu
AU - Zhang, Jiakui
AU - Zha, Gangqiang
AU - Xu, Lingyan
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2021/4
Y1 - 2021/4
N2 - TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.
AB - TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.
UR - https://www.scopus.com/pages/publications/85103101855
U2 - 10.1007/s10854-021-05739-3
DO - 10.1007/s10854-021-05739-3
M3 - 文章
AN - SCOPUS:85103101855
SN - 0957-4522
VL - 32
SP - 10809
EP - 10819
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
ER -