Optimized substrate temperature for high-quality CdZnTe epitaxial film in X-ray flat panel detectors

Cadmium zinc telluride (CdZnTe or CZT) materials, favored for their physical superiority in optoelectronic applications, can be efficiently produced as large-area epitaxial film via close space sublimation (CSS), enhancing potential in flat-panel detector imaging. However, the application of CdZnTe epitaxial film in medical imaging equipment is limited by their lower resistivity, prolonged response times, and diminished sensitivity. By elevating the substrate temperature, we enhanced the number and depth of reverse sublimation pits on the surface of the CdZnTe epitaxial film, established an approximately 100 nm Zn-rich layer, broadened the bandwidth, and minimized electrode injection. Additionally, we observed an aggregation of dislocations at the edges of the reverse sublimation pits, which promoted surface recombination and reduced leakage current. These modifications significantly increased the film's resistivity to 10¹¹ Ω cm. Further, they notably decreased the rise and drop times to 2 m s and 4 m s, respectively. Integrated with thin-film transistors (TFTs), the optimized CdZnTe epitaxial film now distinctly differentiate between air, plastics, and metals under X-ray examination. This improved performance of X-ray flat panel detectors (FPDs) based on CdZnTe epitaxial film is promising for the development of next-generation X-ray detection systems.