Optically Activated Superconductivity in MgB₂ via Electroluminescent GaP Inhomogeneous Phase

Experimental results suggest a feasible strategy for tuning the superconducting properties of MgB₂ through the incorporation of an electroluminescent inhomogeneous phase. By introducing GaP electroluminescent inhomogeneous phases into MgB₂, the effects of emission intensity variation on the sample structure, superconducting transition temperature, electrical transport behavior, and magnetic properties were systematically investigated. The results show that, at a fixed GaP addition level, the superconducting transition temperature T_c increases steadily from 38.2 K to 39.6 K with increasing emission intensity of the inhomogeneous phase, corresponding to a maximum enhancement of approximately 1.4 K. Meanwhile, the zero-resistance temperature shifts upward synchronously, indicating that the entire superconducting transition region moves toward higher temperatures. Raman measurements show that the peak position and linewidth of the E_2g phonon mode evolve systematically with emission intensity, while the electron–phonon coupling parameter λ exhibits a trend consistent with that of T_c. In addition, the nanoscale dispersed distribution of the GaP inhomogeneous phase, together with the interface/defect structures it introduces, appears to promote sample densification and enhance flux pinning, resulting in an increase in the critical current density J_c by approximately 69% at 20 K in self-field and an enhancement of the irreversibility field H_irr by about 31.5%. These results suggest that, beyond the effect of static inhomogeneous-phase incorporation, the luminescence-activated state under bias excitation is likely involved in modulating the superconducting response of MgB₂. This work provides a new experimental perspective for synergistically regulating the properties of conventional superconductors through the combined effects of inhomogeneous phases and excited states.