摘要
Tb2PdSi3 single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. Congruent melting behavior of this compound was proved at a liquidus temperature of about 1700°C which was corresponding to the DTA value. Platelet-like precipitates of TbSi phase was not found in the crystal matrix which was unavoidable in other R2PdSi3 compound single crystal growth. It may be caused by the slightly Tb-enrichment in the crystal matrix. AlB2 type crystal structure and high crystal perfection were proved by X-ray Laue back scattering images. The χ(T) curves of both a and c axis were measured.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 13-17 |
| 页数 | 5 |
| 期刊 | Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment |
| 卷 | 35 |
| 期 | 4 |
| 出版状态 | 已出版 - 4月 2014 |
指纹
探究 'Optical floating zone crystal growth of Tb2PdSi3 and its magnetic property' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver