Optical and electrical properties of La₂O₃ films prepared by ion beam assistant electron beam evaporation

La"2O"3 films were deposited on Si(100) substrates by ion beam assistant electron beam evaporation and were annealed at 450900°C. Crystalline structure was found to change from amorphous structure to cubic and hexagonal structure with the rise in annealing temperature. The near infrared transmittance of the film annealed at 600°C was relatively high and could be further increased using assistant ion beam in deposition. The maximum leakage current density increased dramatically from 10^-7 to 10^-4 A/cm² with the rise in annealing temperature. The film annealed at 600°C with cubic structure had a relatively high dielectric constant of ∼18.