摘要
In the full paper, we explain in detail our research results on nonuniformity characterization and correction of MOS resistor array; in this abstract, we just add some pertinent remarks to the two topics of explanation: (1) the causes and characteristics of nonuniformity of infrared images of MOS resistor array and (2) the nonuniformity measurement and compensation algorithm of MOS resistor array; in topic 1, we find that the main causes of the nonuniformity are the nonlinearity of the resistor array and the nonuniformity of background voltage; in topic 2, we measure voltage vs temperature curves by testing MOS resistor array offline and then establish their compensation table (Table 1 in the full paper), whereby each resistor in MOS resistor array can be corrected in real-time so that its gray degree can match the corresponding datum in Tablel; also in topic 2, we generate the voltage vs temperature curve for each resistor in the array (a typical curve is shown in Fig 4 in the full paper). Our approach was adopted in a real IR scene projector based on MOS resistor array and the user expresssed satisfaction.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 108-112 |
| 页数 | 5 |
| 期刊 | Xibei Gongye Daxue Xuebao/Journal of Northwestern Polytechnical University |
| 卷 | 25 |
| 期 | 1 |
| 出版状态 | 已出版 - 2月 2007 |
指纹
探究 'Nonuniformity characterization and correction of MOS resistor array' 的科研主题。它们共同构成独一无二的指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver