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NIR and MIR Absorption of Ultra-Black Silicon (UBS). Application to High Emissivity, All-Silicon, Light Source

  • Sreyash Sarkar
  • , Ahmed A. Elsayed
  • , Elyes Nefzaoui
  • , Jeremie Drevillon
  • , Philippe Basset
  • , Frederic Marty
  • , Momen Anwar
  • , Yiting Yu
  • , Jiancun Zhao
  • , Xichen Yuan
  • , Zhongzhu Liang
  • , Diaa Khalil
  • , Yasser M. Sabry
  • , Tarik Bourouina

科研成果: 书/报告/会议事项章节会议稿件同行评审

14 引用 (Scopus)

摘要

We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10\ \mu \mathrm{m}. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.

源语言英语
主期刊名2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
出版商Institute of Electrical and Electronics Engineers Inc.
860-862
页数3
ISBN(电子版)9781728116105
DOI
出版状态已出版 - 1月 2019
已对外发布
活动32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019 - Seoul, 韩国
期限: 27 1月 201931 1月 2019

出版系列

姓名Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
2019-January
ISSN(印刷版)1084-6999

会议

会议32nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2019
国家/地区韩国
Seoul
时期27/01/1931/01/19

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