New precursor for metal organic chemical vapor deposition of iridium thin films

Xin Yan; Qiuyu Zhang; Xiaodong Fan

New precursor for metal organic chemical vapor deposition of iridium thin films

Xin Yan
, Qiuyu Zhang
, Xiaodong Fan

化学与化工学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A new precursor Ir(thd)₃ was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)₃ was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 °C. The Iridium films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.

源语言	英语
页（从-至）	1129-1131
页数	3
期刊	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
卷	35
期	7
出版状态	已出版 - 7月 2006

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title = "New precursor for metal organic chemical vapor deposition of iridium thin films",

abstract = "A new precursor Ir(thd)3 was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)3 was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 °C. The Iridium films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.",

keywords = "Iridium film, MOCVD, Precursor",

author = "Xin Yan and Qiuyu Zhang and Xiaodong Fan",

year = "2006",

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language = "英语",

volume = "35",

pages = "1129--1131",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

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TY - JOUR

T1 - New precursor for metal organic chemical vapor deposition of iridium thin films

AU - Yan, Xin

AU - Zhang, Qiuyu

AU - Fan, Xiaodong

PY - 2006/7

Y1 - 2006/7

N2 - A new precursor Ir(thd)3 was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)3 was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 °C. The Iridium films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.

AB - A new precursor Ir(thd)3 was synthesized from iridium salts solution and Hthd. The structure of Ir(thd)3 was characterized by element analysis, infrared spectroscopy, and HNMR spectroscopy. The results of TG showed that the precursor was completely volatile near 290 °C. The Iridium films were prepared from the synthesized precursor by MOCVD. The structure and morphology of iridium films were studied by XRD and AFM. The results showed that the iridium films were successfully prepared and the surface of films was continuous and compact.

KW - Iridium film

KW - MOCVD

KW - Precursor

UR - https://www.scopus.com/pages/publications/33748127087

M3 - 文章

AN - SCOPUS:33748127087

SN - 1002-185X

VL - 35

SP - 1129

EP - 1131

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 7

ER -

New precursor for metal organic chemical vapor deposition of iridium thin films

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