New MOCVD precursor for iridium thin films deposition

Xin Yan; Qiuyu Zhang; Xiaodong Fan

doi:10.1016/j.matlet.2006.04.034

New MOCVD precursor for iridium thin films deposition

Xin Yan
, Qiuyu Zhang
, Xiaodong Fan

化学与化工学院

Northwestern Polytechnical University Xian

科研成果: 期刊稿件 › 文章 › 同行评审

21 引用（Scopus）

摘要

Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)₃ (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, ¹H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)₃ (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

源语言	英语
页（从-至）	216-218
页数	3
期刊	Materials Letters
卷	61
期	1
DOI	https://doi.org/10.1016/j.matlet.2006.04.034
出版状态	已出版 - 1月 2007

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10.1016/j.matlet.2006.04.034

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title = "New MOCVD precursor for iridium thin films deposition",

abstract = "Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.",

keywords = "Iridium, MOCVD, Precursor, Thin films",

author = "Xin Yan and Qiuyu Zhang and Xiaodong Fan",

year = "2007",

month = jan,

doi = "10.1016/j.matlet.2006.04.034",

language = "英语",

volume = "61",

pages = "216--218",

journal = "Materials Letters",

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TY - JOUR

T1 - New MOCVD precursor for iridium thin films deposition

AU - Yan, Xin

AU - Zhang, Qiuyu

AU - Fan, Xiaodong

PY - 2007/1

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N2 - Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

AB - Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

KW - Iridium

KW - MOCVD

KW - Precursor

KW - Thin films

UR - https://www.scopus.com/pages/publications/33750618242

U2 - 10.1016/j.matlet.2006.04.034

DO - 10.1016/j.matlet.2006.04.034

M3 - 文章

AN - SCOPUS:33750618242

SN - 0167-577X

VL - 61

SP - 216

EP - 218

JO - Materials Letters

JF - Materials Letters

IS - 1

ER -

New MOCVD precursor for iridium thin films deposition

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