TY - JOUR
T1 - Multi-Bonding Molecular Interface Bridges Enable Synergistic Defect Passivation, Strain Relaxation, and Accelerated Electron Extraction in Perovskite Solar Cells
AU - Wang, Dingwei
AU - Chen, Weiyuan
AU - Gu, Weidan
AU - Wang, Lin
AU - Kang, Yongxia
AU - Liu, Jinwen
AU - Zhang, Yuxin
AU - Li, Qingshan
AU - Zhang, Zhipeng
AU - Song, Lin
AU - Du, Bin
N1 - Publisher Copyright:
© 2026 Wiley-VCH GmbH.
PY - 2026
Y1 - 2026
N2 - Buried interfacial defects, residual strain, and unfavorable energy-level alignment collectively limit charge extraction and induce nonradiative recombination losses in high-performance perovskite solar cells (PSCs). Here, we report a multifunctional molecular-bridge strategy based on 2-amino-3-hydroxybutanoic acid (AHBA) for simultaneous regulation of the SnO2/perovskite buried interface. Benefiting from its synergistic amino, hydroxyl, and carboxyl functional groups, AHBA establishes a cross-linked interfacial interaction network through coordinated bonding and hydrogen-bonding interactions, enabling bilateral defect passivation, interfacial strain relaxation, and accelerated electron extraction. The resulting interface exhibits reduced trap density, optimized energy-level alignment, enhanced crystallographic ordering, and suppressed nonradiative recombination. Ultrafast transient absorption spectroscopy reveals a charge-carrier extraction time of only 3.5 ps, demonstrating markedly accelerated interfacial charge transfer. The reconstructed electronic landscape further promotes efficient carrier collection and long-range transport, leading to a champion power conversion efficiency of 26.32% with a fill factor of 85.69% and significantly reduced hysteresis. In addition, the target sample devices retain over 90% of their initial efficiency after 2000 h of storage under ambient conditions and exhibit substantially enhanced thermal stability. This work establishes a molecular-level design principle that couples defect passivation, strain management, and carrier-dynamics engineering, providing a versatile route toward highly efficient and durable perovskite photovoltaics.
AB - Buried interfacial defects, residual strain, and unfavorable energy-level alignment collectively limit charge extraction and induce nonradiative recombination losses in high-performance perovskite solar cells (PSCs). Here, we report a multifunctional molecular-bridge strategy based on 2-amino-3-hydroxybutanoic acid (AHBA) for simultaneous regulation of the SnO2/perovskite buried interface. Benefiting from its synergistic amino, hydroxyl, and carboxyl functional groups, AHBA establishes a cross-linked interfacial interaction network through coordinated bonding and hydrogen-bonding interactions, enabling bilateral defect passivation, interfacial strain relaxation, and accelerated electron extraction. The resulting interface exhibits reduced trap density, optimized energy-level alignment, enhanced crystallographic ordering, and suppressed nonradiative recombination. Ultrafast transient absorption spectroscopy reveals a charge-carrier extraction time of only 3.5 ps, demonstrating markedly accelerated interfacial charge transfer. The reconstructed electronic landscape further promotes efficient carrier collection and long-range transport, leading to a champion power conversion efficiency of 26.32% with a fill factor of 85.69% and significantly reduced hysteresis. In addition, the target sample devices retain over 90% of their initial efficiency after 2000 h of storage under ambient conditions and exhibit substantially enhanced thermal stability. This work establishes a molecular-level design principle that couples defect passivation, strain management, and carrier-dynamics engineering, providing a versatile route toward highly efficient and durable perovskite photovoltaics.
KW - 2-amino-3-hydroxybutanoic acid
KW - buried interface
KW - charge carrier dynamics
KW - defect passivation
KW - perovskite solar cell
UR - https://www.scopus.com/pages/publications/105045631780
U2 - 10.1002/adfm.77373
DO - 10.1002/adfm.77373
M3 - 文章
AN - SCOPUS:105045631780
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -