MOSFET model analysis for submicron and nanometer bulk-driven applications

Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to submicron/nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform correctly and accurately for the bulk-driven applications in the advanced technologies. In this paper, three most widely used MOSFET models, including BSIM, EKV, and PSP, have been extracted for the modern technologies and used in the simulation of bulk-driven applications. Measurement data of fabricated devices are compared with simulation results from distinct models. Several critical MOSFET parameters have been chosen to compare and analyze MOSFET characteristics. The experimental results demonstrate the advantages of the bulk-driven technique compared with the gate-driven scheme. Finally, the performance of distinct MOSFET models is summarized in order to provide analog circuit designers with practical directives.